2SJ448 datasheet(5/8 Pages) NEC

Teilenummer	2SJ448

Bauteilbeschribung	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

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2SJ448

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

ID - Drain Current - A

1.0

–0.1

–50

1.0

2.0

3.0

100

150

ID = –2 A

0.1

100

0.5

Pulsed

1.0

–1.0

100

1 000

–10

–100

–1 000

VGS = 0

f = 1 MHz

100

1 000

–1.0

–10

–100

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

ID - Drain Current - A

di/dt = 50 A/ s

VGS = 0

0.1

100

1 000

10 000

1.0

100

1.0

1.5

4.0

VDD = –125 V

VGS = –10 V

RG = 10

Ω

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

Qg - Gate Charge - nC

–100

–200

ID = –6 A

–4

–8

–12

–16

VGS= –10 V

Ciss

VGS = 0 V

10 V

Crss

Coss

td(on)

td(off)

VDD= –200 V

–125 V

–50 V

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