PMPB12UN datasheet(4/15 Pages) PHILIPS

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NXP Semiconductors

PMPB12UN

20 V single N-channel Trench MOSFET

PMPB12UN

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Product data sheet

6 July 2012

4 / 15

017aaa613

10-1

102

(A)

10-2

VDS (V)

10-2

102

10-1

Limit RDSon = VDS/ID

tp = 1 ms

tp = 100 µs

tp = 10 ms

tp = 100 ms

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

235

270

K/W

[2]

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[3]

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s

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