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PMPB12UN Datenblatt(PDF) 9 Page - NXP Semiconductors

Teilenummer PMPB12UN
Bauteilbeschribung  20 V single N-channel Trench MOSFET
PDF  15 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
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PMPB12UN Datenblatt(HTML) 9 Page - NXP Semiconductors

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NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
PMPB12UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
6 July 2012
9 / 15
QG (nC)
0
10
8
4
6
2
017aaa622
1.5
3.0
4.5
VGS
(V)
0
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. Gate charge waveform definitions
VSD (V)
0
1.0
0.8
0.4
0.6
0.2
017aaa623
0.8
0.4
1.2
1.6
IS
(A)
0
Tj = 150 °C
Tj = 25 °C
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 17. Duty cycle definition



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