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BAS16D Datenblatt(PDF) 1 Page - General Semiconductor

Teilenummer BAS16D
Bauteilbeschribung  SMALL SIGNAL DIODES
PDF  2 Pages
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Hersteller  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BAS16D Datenblatt(HTML) 1 Page - General Semiconductor

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BAS16D, BAS16WS
SMALL SIGNAL DIODES
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ Fast switching diode.
♦ Also available in case SOT-23
with designation BAS16.
MECHANICAL DATA
BAS16D
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Marking Code: A6
BAS16WS
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: A6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
75
V
Peak Reverse Voltage
VRM
100
V
Forward Current (continuous)
IF
250
mA
Non-Repetitive Peak Forward Current
at t = 1
µsIFSM
2.0
A
at t = 1ms
IFSM
1.0
A
at t = 1s
IFSM
0.5
A
Power Dissipation at Tamb = 25 °C
BAS16D
Ptot
3501)
mW
BAS16WS
2001)
mW
Maxium Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
– 65 to +1501)
°C
1)Valid provided electrodes are kept at ambient temperture.
.022 (0.55)
.067 (1.70)
min. .010 (0.25)
Cathode Mark
Top View
.055 (1.40)
10/21/98
min. .010 (0.25)
.012 (0.3)
.059 (1.5)
Cathode Mark
Top View
.043 (1.1)
SOD-123
(BAS16D)
SOD-323
(BAS16WS)
Dimensions in inches and (millimeters)
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