BAS16D datasheet(2/2 Pages) GE

Teilenummer	BAS16D

Bauteilbeschribung	SMALL SIGNAL DIODES

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Hersteller	GE [General Semiconductor]

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BAS16D, BAS16W

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 1 mA

–

715

at IF = 10 mA

–

855

at IF = 50 mA

–

1.00

at IF = 150 mA

–

1.25

Leakage Current

at VR = 25 V, Tj = 150 °C

––30

µA

at VR = 75 V

––

µA

at VR = 75 V, Tj = 150 °C

––50

µA

Capacitance

Ctot

––

at VR = 0; f = 1 MHz

Reverse Recovery Time

trr

––

from IF = 10 mA to IR = 10 mA

IR = 1 mA, RL = 100

Ω

Thermal Resistance

BAS16D

RthJA

–

3751)

°C/W

Junction to Ambient Air

BAS16WS

6501)

°C/W

1)Valid provided that electrodes are kept at ambient temperature

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