2SD667A datasheet(2/6 Pages) HITACHI

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2SD667, 2SD667A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SD667

2SD667A

Unit

Collector to base voltage

CBO

120

Collector to emitter voltage

CEO

100

Emitter to base voltage

EBO

55V

Collector current

11A

Collector peak current

C(peak)

22A

Collector power dissipation

0.9

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

–50 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SD667

2SD667A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

(BR)CBO

120

—

120

—

C = 10 µA, IE = 0

Collector to emitter

breakdown voltage

(BR)CEO

—

100

—

C = 1 mA, RBE = ∞

Emitter to base

breakdown voltage

(BR)EBO

5—

—

E = 10 µA, IC = 0

Collector cutoff current

CBO

—

µAV

CB = 100 V, IE = 0

DC current transfer ratio h

FE1*

—

320

—

200

CE = 5 V,

C = 150 mA*

FE2

—

CE = 5 V,

C = 500 mA*

Collector to emitter

saturation voltage

CE(sat)

—

1VI

C = 500 mA,

B = 50 mA*

Base to emitter voltage

—

1.5

—

1.5

CE = 5 V,

C = 150 mA*

Gain bandwidth product f

—

140

—

140

—

MHz

CE = 5 V,

C = 150 mA*

Collector output

capacitance

Cob

—

CB = 10 V, IE = 0,

f = 1 MHz

Notes: 1. The 2SD667 and 2SD667A are grouped by h

FE1 as follows.

2. Pulse test

2SD667

60 to 120

100 to 200

160 to 320

2SD667A

60 to 120

100 to 200

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