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2SD667A Datenblatt(PDF) 4 Page - Hitachi Semiconductor |
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2SD667A Datenblatt(HTML) 4 Page - Hitachi Semiconductor |
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4 / 6 page ![]() 2SD667, 2SD667A 4 Collector Current IC (mA) 1.2 IC = 10 IB Pulse Ta = –25 °C Ta = –25 °C 25 25 75 75 1.0 0.8 0.6 0.4 0.2 0 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1,000 3 30 300 VBE(sat) VCE(sat) Saturation Voltage vs. Collector Current Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 240 200 160 120 80 40 0 10 30 100 300 1,000 VCE = 5 V Collector Output Capacitance vs. Collector to Base Voltage Collector to Base Voltage VCB (V) f = 1 MHz IE = 0 200 100 50 20 10 5 2 1 5 20 100 210 50 |
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