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ACE25C800G Datenblatt(PDF) 29 Page - ACE Technology Co., LTD. |
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ACE25C800G Datenblatt(HTML) 29 Page - ACE Technology Co., LTD. |
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29 / 37 page ![]() ACE25C800G Uniform SECTOR Dual and Quad Serial Flash VER 1.6 29 Figure27. Write Enable for Volatile Status Register Power – On Timing Table3. Power-Up Timing And Write Inhibit Threshold Symbol Parameter Min Max Unit tVSL VCC(min) To CS# Low 10 us tPUW Time Delay From VCC(min) To Write Instruction 1 10 ms VWI Write Inhibit Voltage VCC(min) 1 2.5 V Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register contains 00H (all Status Register bits are 0). Data Retention And Endurance Parameter Test Condition Min Units Minimum Pattern Data Retention Time 150℃ 10 Years 125℃ 20 Years Erase / Program Endurance -40 to 85 ℃ 100K Cycles |
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