 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
3N172 Datenblatt(PDF) 1 Page - Calogic, LLC |
|
|
|||||||||||||||||||||||||||||
3N172 Datenblatt(HTML) 1 Page - Calogic, LLC |
|
|
1 / 2 page  Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES •• High Input Impedance •• Diode Protected Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 µA Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Storage Temperature . . . . . . . . . . . . . . . . . . -65 oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55 oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300 oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above 25 oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range 3N172-73 Hermetic TO-72 -55 oC to +150oC X3N172-73 Sorted Chips in Carriers -55 oC to +150oC LLC PIN CONFIGURATION TO-72 G D S C,B 1503Z DEVICE SCHEMATIC 1 2 0200 3 4 ELECTRICAL CHARACTERISTICS (TA = 25 oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER 3N172 3N173 UNITS TEST CONDITIONS MIN MAX MIN MAX IGSS Gate Reverse Current -200 -500 pA VGS = -20V -0.5 -1.0 µA TA = +125 oC BVGSS Gate Breakdown Voltage -40 -125 -30 -125 V ID = -10 µA BVDSS Drain-Source Breakdown Voltage -40 -30 ID = -10 µA BVSDS Source-Drain Breakdown Voltage -40 -30 IS = -10 µA, VDB = 0 VGS(th) Threshold Voltage -2.0 -5.0 -2.0 -5.0 VDS = VGS, ID = -10 µA -2.0 -5.0 -2.0 -5.0 VDS = -15V, ID = -10 µA VGS Gate Source Voltage -3.0 -6.5 -2.5 -6.5 VDS = -15V, ID = -500 µA IDSS Zero Gate Voltage Drain Current -0.4 -10 nA VDS = -15V, VGS = 0 ISDS Zero Gate Voltage Source Current -0.4 -10 VSD = -15V, VDB = 0, VGD = 0 rDS(on) Drain Source On Resistance 250 350 ohms VGS = -20V, ID = -100 µA ID(on) On Drain Current -5.0 -30 -5.0 -30 mA VDS = -15V, VGS = -10V CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS020 REV A |
Ähnliche Teilenummer - 3N172_15 |
|
Ähnliche Beschreibung - 3N172_15 |
|
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
