IRF9953

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

0

100

200

300

400

1

1 0

100

A

DS

-V

, Drain -to -So urce V oltag e (V)

V

= 0V ,

f = 1MH z

C

= C

+ C

, C

S H OR TED

C

= C

C

= C

+ C

GS

iss

gs

g d

ds

rs s

g d

os s

ds

gd

0

2

4

6

8

10

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

I =

D

-2.3A

V

=-10V

DS

0.1

1

10

100

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D =

t / t

2. Peak T

= P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)