9953 datasheet(1/7 Pages) IRF

Teilenummer	9953

Bauteilbeschribung	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

PDF	7 Pages

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Hersteller	IRF [International Rectifier]

Direct Link	http://www.irf.com

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PRELIMINARY

HEXFET® Power MOSFET

PD - 9.1560A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

8/25/97

SO-8

VDSS = -30V

RDS(on) = 0.25Ω

IRF9953

Description

Recommended upgrade: IRF7306 or IRF7316

Lower profile/smaller equivalent: IRF7506

Symbol

Maximum

Units

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

± 20

TA = 25°C

-2.3

TA = 70°C

-1.8

Pulsed Drain Current

IDM

-10

Continuous Source Current (Diode Conduction)

IS

1.6

TA = 25°C

2.0

TA = 70°C

1.3

Single Pulse Avalanche Energy

EAS

57

mJ

Avalanche Current

IAR

-1.3

A

Repetitive Avalanche Energy

EAR

0.20

mJ

Peak Diode Recovery dv/dt

dv/dt

-5.0

V/ ns

Junction and Storage Temperature Range

TJ, TSTG

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

RθJA

62.5

°C/W

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Continuous Drain Current

Maximum Power Dissipation

A

ID

PD

V

W

D1

D2

G1

S2

G2

S1

T op V iew

8

1

2

3

4

5

6

7

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Surface Mount

l Very Low Gate Charge and

Switching Losses

l Fully Avalanche Rated

Ähnliche Beschreibung - 9953

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
International Rectifier	IRF5800	98Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)
	IRF7413A	116Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
	IRF7416	116Kb / 9P	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
	IRF7503	114Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
	IRF7603	113Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
	IRF7606	102Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)
	IRF9410	114Kb / 7P	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
	IRF9956	107Kb / 7P	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
	IRLML2803	191Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
	SI4435DY	82Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

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