IRFD320 datasheet(1/8 Pages) IRF

Teilenummer	IRFD320

Bauteilbeschribung	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)

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Hersteller	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10 V

0.49

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10 V

0.31

A

IDM

Pulsed Drain Current

3.9

PD @TC = 25°C

Power Dissipation

1.0

W

Linear Derating Factor

0.0083

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

48

mJ

IAR

Avalanche Current

0.49

A

EAR

Repetitive Avalanche Energy

0.10

mJ

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

IRFD320

HEXFET® Power MOSFET

PD -9.1226

Revision 0

VDSS = 400V

RDS(on) = 1.8Ω

ID = 0.49A

Absolute Maximum Ratings

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJA

Junction-to-Ambient

—

120

°C/W

Dynamic dv/dt Rating

Repetitive Avalanche Rated

For Automatic Insertion

End Stackable

Fast Switching

Ease of paralleling

Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The 4-pin DIP package is a low-cost machine-insertable case style which can be

stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain

serves as a thermal link to the mounting surface for power dissipation levels up to

1 watt.

Description

A

HD-1

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Ähnliche Beschreibung - IRFD320

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
International Rectifier	IRC730	223Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)
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	IRFI720G	170Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)
	IRFI740G	169Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)
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	IRFP350	161Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)
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