IRGPF50F datasheet(3/6 Pages) IRF

Teilenummer	IRGPF50F

Bauteilbeschribung	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)

PDF	6 Pages

Scroll/Zoom	100%

Hersteller	IRF [International Rectifier]

Direct Link	http://www.irf.com

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3 / 6 page

C-269

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

IRGPF50F

2 0

4 0

6 0

0 .1

1 0

1 0 0

f, F re q u e n cy (kH z)

6 0% o f ra te d

vo lta ge

Id ea l diodes

S qu a re w a ve :

F or b oth :

D u ty c yc le : 5 0 %

= 1 2 5 °C

= 9 0 °C

G a te d rive a s s p e c ifie d

sin k

P o w e r Diss ipa tio n = 4 0W

Tria n g u la r w a ve :

C la mp vo lta g e:

80 % o f ra te d

1 0

1 0 0

1 0 0 0

1 0

C E

, C o llector-to-E m itter V oltage (V )

T = 1 50 °C

T = 2 5°C

= 15 V

20 µs P U L S E W ID T H

G E

1 0

1 0 0

1 0 0 0

1 0

1 5

2 0

, G a te -to -E m itte r V o lta g e (V )

G E

T = 25 °C

T = 1 50 °C

= 1 00 V

5 µ s P U L S E W ID T H

C C

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