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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRGPF50F Datenblatt(PDF) 2 Page - International Rectifier |
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IRGPF50F Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 6 page  C-268 IRGPF50F Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 81 120 IC = 28A Qge Gate - Emitter Charge (turn-on) ---- 16 24 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 29 44 VGE = 15V td(on) Turn-On Delay Time ---- 32 ---- TJ = 25°C tr Rise Time ---- 22 ---- ns IC = 28A, VCC = 720V td(off) Turn-Off Delay Time ---- 200 280 VGE = 15V, RG = 5.0Ω tf Fall Time ---- 130 180 Energy losses include "tail" Eon Turn-On Switching Loss ---- 1.1 ---- Eoff Turn-Off Switching Loss ---- 1.8 ---- mJ See Fig. 9, 10, 11, 14 Ets Total Switching Loss ---- 2.9 4.1 td(on) Turn-On Delay Time ---- 32 ---- TJ = 150°C, tr Rise Time ---- 20 ---- ns IC = 28A, VCC = 720V td(off) Turn-Off Delay Time ---- 480 ---- VGE = 15V, RG = 5.0Ω tf Fall Time ---- 450 ---- Energy losses include "tail" Ets Total Switching Loss ---- 5.7 ---- mJ See Fig. 10, 14 LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Cies Input Capacitance ---- 2300 ---- VGE = 0V Coes Output Capacitance ---- 180 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 27 ---- ƒ = 1.0MHz Notes: VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω, ( See fig. 13a ) Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 900 ---- ---- V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 ---- ---- V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.74 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 2.1 2.7 IC = 28A VGE = 15V ---- 2.7 ---- V IC = 51A See Fig. 2, 5 ---- 2.4 ---- IC = 28A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -9.7 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 12 18 ---- S VCE = 100V, IC = 28A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 900V ---- ---- 2000 VGE = 0V, VCE = 900V, T J = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Next Data Sheet Index Previous Datasheet To Order |
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