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TGF2953 Datenblatt(PDF) 18 Page - TriQuint Semiconductor |
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TGF2953 Datenblatt(HTML) 18 Page - TriQuint Semiconductor |
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18 / 21 page ![]() TGF2953 12 Watt Discrete Power GaN on SiC HEMT Datasheet: Rev A 10-22-14 - 18 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Measured Power Tuned Data Bond wires included. 30 31 32 33 34 35 36 37 38 39 40 41 42 21 22 23 24 25 26 27 28 29 30 31 Output Power [dBm] 30 31 32 33 34 35 36 37 38 39 40 41 42 0 8 16 24 32 40 48 56 64 72 80 TGF2953 Measured Data 1GHz, 32V, 50mA, 100uS, 10%, Power Tuned Γ Γ Γ Γ s = 0.686∠ ∠ ∠ ∠ 122°°°° Γ Γ Γ Γ s2 = 0.783∠ ∠ ∠ ∠ -7.3°°°° Γ Γ Γ Γ s3 = 0.832∠ ∠ ∠ ∠ -131°°°° Γ Γ Γ Γ l = 0.236∠ ∠ ∠ ∠ 139°°°° Γ Γ Γ Γ l2 = 0.340∠ ∠ ∠ ∠ -46°°°° Γ Γ Γ Γ l3 = 0.419∠ ∠ ∠ ∠ 169°°°° Zo = 50Ω Ω Ω Ω 30 31 32 33 34 35 36 37 38 39 40 41 42 15 16 17 18 19 20 21 22 23 24 25 Output Power [dBm] 30 31 32 33 34 35 36 37 38 39 40 41 42 0 8 16 24 32 40 48 56 64 72 80 TGF2953 Measured Data 3.5GHz, 32V, 50mA, 100uS, 10%, Power Tuned Γ Γ Γ Γ s = 0.824∠ ∠ ∠ ∠ 172°°°° Γ Γ Γ Γ s2 = 0.313∠ ∠ ∠ ∠ -85°°°° Γ Γ Γ Γ s3 = 0.593∠ ∠ ∠ ∠ 174°°°° Γ Γ Γ Γ l = 0.415∠ ∠ ∠ ∠ 139°°°° Γ Γ Γ Γ l2 = 0.518∠ ∠ ∠ ∠ 10°°°° Γ Γ Γ Γ l3 = 0.458∠ ∠ ∠ ∠ -116°°°° Zo = 50Ω Ω Ω Ω |
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