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LTC1625IGN Datenblatt(PDF) 17 Page - Linear Technology |
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LTC1625IGN Datenblatt(HTML) 17 Page - Linear Technology |
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17 / 24 page ![]() 17 LTC1625 APPLICATIONS INFORMATION automobile is the source of a number of nasty potential transients, including load dump, reverse and double battery. Load dump is the result of a loose battery cable. When the cable breaks connection, the field collapse in the alternator can cause a positive spike as high as 60V which takes several hundred milliseconds to decay. Reverse battery is just what it says, while double battery is a consequence of tow truck operators finding that a 24V jump start cranks cold engines faster than 12V. The network shown in Figure 8 is the most straightforward approach to protect a DC/DC converter from the ravages of an automotive battery line. The series diode prevents current from flowing during reverse battery, while the transient suppressor clamps the input voltage during load dump. Note that the transient suppressor should not conduct during double-battery operation, but must still clamp the input voltage below breakdown of the converter. Although the LTC1625 has a maximum input voltage of 36V, most applications will be limited to 30V by the MOSFET V(BR)DSS. For 40% ripple current at maximum VIN the inductor should be: L V kHz A V V H ≥ =µ 33 225 0 4 2 1 33 22 16 . ( )( . )( ) – . Choosing a standard value of 15 µH results in a maximum ripple current of: ∆I V kHz H V V A L MAX () . ()( ) – . . = µ = 33 225 15 1 33 22 083 Next, check that the minimum value of the current limit is acceptable. Assume a junction temperature close to a 70 °C ambient with ρ80°C = 1.3. I mV AA LIMIT ≥ Ω = 150 0 042 1 3 1 2 083 2 3 (. )( . ) –. . This is comfortably above IO(MAX)= 2A. Now double-check the assumed TJ: P V V A A pF kHz mW mW mW TOP =Ω + =+= 33 22 23 13 0042 1 7 22 2 3 180 225 43 77 120 2 2 . ( . ) (.)( . ) (. )( ) ( . )( )( ) TJ = 70°C + (120mW)(50°C/W) = 76°C Since ρ(76°C) ≅ ρ(80°C), the solution is self-consistent. A short circuit to ground will result in a folded back current of: I mV V s H A SC = Ω + µ µ = 30 003 1 1 1 2 15 0 5 15 12 (. )( . ) ()( . ) . with a typical value of RDS(ON) and ρ(50°C) = 1.1. The resulting power dissipated in the bottom MOSFET is: P VV V AmW BOT =Ω = 15 3 3 15 12 11 003 37 2 –. (. ) ( . )( . ) which is less than under full load conditions. VIN TRANSIENT VOLTAGE SUPPRESSOR GENERAL INSTRUMENT 1.5KA24A 12V LTC1625 50A IPK RATING 1625 F08 PGND Figure 8. Automotive Application Protection Design Example As a design example, take a supply with the following specifications: VIN = 12V to 22V (15V nominal), VOUT = 3.3V, IO(MAX) = 2A, and f = 225kHz. The required RDS(ON) can immediately be estimated: R mV A DS ON () ()( . ) . == Ω 120 21 3 0 046 A 0.042 Ω Siliconix Si4412DY MOSFET (θJA = 50°C/W) is close to this value. |
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