DMN3150L

Document number: DS31126 Rev. 9 - 2

1 of 5

www.diodes.com

October 2013

© Diodes Incorporated

DMN3150L

31N

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features



Low On-Resistance:









Low Gate Threshold Voltage



Low Input Capacitance



Fast Switching Speed



Low Input/Output Leakage



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)



Halogen and Antimony Free. “Green” Device (Note 3)



Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data



Case: SOT-23



Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020



Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208



Terminal Connections: See Diagram

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Marking Information: See Page 4

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Ordering Information: See Page 4

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Weight: 0.008 grams (approximate)

Part Number

Case

Packaging

DMN3150L-7

SOT-23

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/ products/packages.html

Marking Information

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

2016

2017

2018

Code

W

X

Y

Z

A

B

C

D

E

F

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT-23

TOP VIEW

Source

EQUIVALENT CIRCUIT

Gate

Drain

D

GS

Pin Configuration

31N = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y̅ = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Chengdu A/T Site

Shanghai A/T Site