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DMN3150L Datenblatt(PDF) 2 Page - Diodes Incorporated

Teilenummer DMN3150L
Bauteilbeschribung  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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Hersteller  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3150L Datenblatt(HTML) 2 Page - Diodes Incorporated

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DMN3150L
Document number: DS31126 Rev. 9 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3150L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
12
V
Drain Current (Note 5)
TA = +25°C
TA = +70°C
ID
3.8
3.1
A
Drain Current (Note 5)
Pulsed
IDM
15
A
Body-Diode Continuous Current (Note 5)
IS
2.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.4
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
RJA
90
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
800
nA
VDS = 28V, VGS = 0V
Gate-Body Leakage
IGSS
80
800
nA
VGS = ±12V, VDS = 0V
VGS = ±19V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.62
0.92
1.4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)

39
52
90
54
72
115
mΩ
VGS = 10V, ID = 3.8A
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
Forward Transconductance
|Yfs|
3
S
VDS = 5V, ID = 3.1A
Source-Drain Diode Forward Voltage
VSD
1.16
V
VGS = 0V, IS = 2.0A
DYNAMIC CHARACTERISTICS (Note 7)
Gate Resistance
Rg
-
4.17
-
Ω
VDS =0V, VGS = 0V,
f = 1MHz
Total Gate Charge (10V)
Qg
-
8.2
-
nC
VGS = 10 V, VDS = 10V,
ID = 3.8 A
Total Gate Charge (4.5V)
Qg
-
3.7
-
nC
VGS =4.5 V, VDS = 10V,
ID = 3.8 A
Gate-Source Charge
Qgs
-
0.7
-
nC
Gate-Drain Charge
Qgd
-
1.1
-
nC
Turn-On Delay Time
tD(on)
-
1.14
-
ns
VDD = 15V, VGEN = 10V,
RGEN = 6Ω, RL = 3.9Ω
Turn-On Rise Time
tr
-
3.49
-
ns
Turn-Off Delay Time
tD(off)
-
15.02
-
ns
Turn-Off Fall Time
tf
-
3.26
-
ns
Input Capacitance
Ciss
305
pF
VDS = 5V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
74
pF
Reverse Transfer Capacitance
Crss
48
pF
Notes:
5. Device mounted on FR-4 PCB. t
≤5 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.



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