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SBB5000 Datenblatt(PDF) 2 Page - RF Micro Devices |
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SBB5000 Datenblatt(HTML) 2 Page - RF Micro Devices |
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2 / 6 page ![]() 2 of 6 DS111219 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB5000 Typical Performance (GSG Probe Data with Bias Tees) VD=5V, ID=75mA, T=25°C, Z=50 Absolute Maximum Ratings Parameter Rating Unit Total Current (ID)100 mA Device Voltage (VD)5.5 V Power Dissipation 0.55 W Operating Lead Temperature (TL) -40 to +85 °C RF Input Power +24 dBm Storage Temperature Range -55 to +150 °C Operating Junction Temperature (TJ)+150 °C ESD Rating - Human Body Model (HBM) Class 1C Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l Parameter Units 500MHz 1000MHz 1500MHz 2000MHz 3000MHz 4000MHz Small Signal Gain dB 20.5 20.5 20.5 20.5 20.5 20.0 Output 3rd Order Intercept Point (see note 1) dBm 37.0 36.0 35.0 35.0 33.0 30.0 Output Power at 1dB Compression dBm 21.0 20.5 20.5 20.5 19.5 17.0 Input Return Loss dB 27.0 21.0 17.0 15.0 11.0 9.5 Output Return Loss dB 22.0 18.0 14.6 12.0 9.0 7.2 Reverse Isolation dB 22.1 22.5 22.4 22.9 23.0 23.0 Noise Figure dB 3.8 4.0 3.9 3.9 4.0 3.8 Note 1: 0dBm/tone, 1MHz spacing Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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