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SBB5000 Datenblatt(PDF) 1 Page - RF Micro Devices |
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SBB5000 Datenblatt(HTML) 1 Page - RF Micro Devices |
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1 / 6 page ![]() Features 1 of 6 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SBB5000 0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER RFMD’s SBB5000 is a high performance InGaP HBT MMIC amplifier utilizing a Dar- lington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Its efficient operation from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applications. It is well-suited for high linearity 5V gain block applications and it is internally matched to 50 . RFMD can provide 100% DC screening, visual inspection, and Hi-Rel water qualifi- cation. Die can be delivered at the wafer level or picked to gel or waffle paks. Gain and Return Loss versus Frequency VS=5V, IS=75mA -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) IRL Gain ORL GSG Probe Data with Bias Tees ZS=ZL=50 Ohms, T=25°C OIP3=35dBm at 2000MHz P1dB=20.5dBm at 2000MHz Single Fixed 5V Supply Compact Die Size (0.59mmx0.70mm) Patented Thermal Design & Bias Circuit Low Thermal Resistance Applications PA Driver Amplifier RF Pre-driver and RF Receive Path Military Communications Test and Instrumentation DS111219 Package: Bare Die SBB5000 0.05GHz to 6GHz, Cascad- able Active Bias InGaP HBT MMIC Amplifier Parameter Specification Unit Condition Min. Typ. Max. Frequency of Operation 50 6000 MHz Small Signal Gain 20.5 dB Frequency=500MHz 20.5 dB Frequency=2000Mhz 20.0 dB Frequency=4000MHz Output Power at 1dB Compression 21.0 dBm Frequency=500MHz 20.5 dBm Frequency=2000MHz 17.0 dBm Frequency=4000MHz Output IP3 37.0 dBm Frequency=500MHz 35.0 dBm Frequency=2000MHz 30.0 dBm Frequency=4000MHz Input Return Loss 15.0 dB Frequency=2000MHz Output Return Loss 12.0 dB Frequency=2000MHz Current 75.0 mA Noise Figure 3.9 dB Frequency=2000MHz Thermal Resistance 69.9 °C/W Junction to lead (89 pkg) Test Conditions: Z0=50, VD=5V, ID=75mA, T=25°C, OIP3 Tone Spacing=1MHz, POUT/tone=0dBm. GSG Probe Data with Bias Tees. |
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