3N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-283.I



PARAMETER

SYMBOL

RATINGS

UNIT

800

V

800

V

Gate-Source Voltage

±30

V

30 (MIN)

V

Insulation Withstand Voltage (DC) TO-220F/ TO-220F1

2500

V

Avalanche Current (Note 2)

3

A

Continuous Drain Current

3

A

Pulsed Drain Current

10

A

Single Pulse Avalanche Energy (Note 3)

170

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

70

TO-220F/ TO-220F1

TO-220F2

25

Power Dissipation

TO-251/ TO-252

50

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220F/TO-220F1

TO-220F2

62.5

TO-220

125

Junction to Ambient

TO-251/TO-252

110

°C/W

TO-220

1.78

TO-220F/ TO-220F1

TO-220F2

5

Junction to Case

TO-251/ TO-252

2.5

°C/W