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3N80G-TN3-R Datenblatt(PDF) 4 Page - Unisonic Technologies

Teilenummer 3N80G-TN3-R
Bauteilbeschribung  N-CHANNEL POWER MOSFET
PDF  8 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N80G-TN3-R Datenblatt(HTML) 4 Page - Unisonic Technologies

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3N80
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 8
www.unisonic.com.tw
QW-R502-283.I
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
800
V
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
1
μA
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±10
μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3
3.75 4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
3.2
4.2
Ω
Forward Transconductance (Note 1)
gFS
VDS=15V, ID=1.5A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
485
pF
Output Capacitance
COSS
57
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1MHz
11
pF
Equivalent Output Capacitance (Note 2)
COSS(EQ)
VGS=0V, VDS=0V~640V
22
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
17
ns
Turn-On Rise Time
tR
27
ns
Turn-Off Delay Time
tD(OFF)
36
ns
Turn-Off Fall Time
tF
VDD=400V, ID=3 A,
RG=4.7Ω, VGS=10V
40
ns
Total Gate Charge
QG
19
nC
Gate-Source Charge
QGS
3.2
nC
Gate-Drain Charge
QDD
VDD=640V, ID=3A, VGS=10V
10.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6
V
Source-Drain Current
ISD
2.5
A
Source-Drain Current (Pulsed)
ISDM
10
A
Reverse Recovery Current
IRRM
8.4
A
Body Diode Reverse Recovery Time
trr
384
ns
Body Diode Reverse Recovery Charge
QRR
ISD=3A, di/dt=100A/μs,
VDD=50V, TJ=25°C
1600
nC
Note: 1. Pulse width = 300μs, Duty cycle≦1.5%
Note: 2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.



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