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F2N60L-TN3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer F2N60L-TN3-R
Bauteilbeschribung  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
PDF  6 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

F2N60L-TN3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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F2N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-952.A
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Drain Current
Continuous
ID
2.0
A
Pulsed (Note 2)
IDM
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
100
mJ
Repetitive (Note 2)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25°С)
PD
44
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°С/W
Junction to Case
θJc
2.87
°С/W



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