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F2N60L-TN3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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F2N60L-TN3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD F2N60 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-952.A 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 F2N60L-TN3-T F2N60G-TN3-T TO-252 G D S Tube F2N60L-TN3-R F2N60G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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