MS2209 datasheet(1/3 Pages) MICROSEMI

Teilenummer	MS2209

Bauteilbeschribung	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION

PDF	3 Pages

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Hersteller	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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MSC0930.PDF 10-13-98

MS2209

DESCRIPTION:

THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,

HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED

FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH

WITH MODERATED DUTY CYCLE AND PULSE WIDTH

CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN.

THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED

APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER

UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS

AND HIGH BURST OR OVERALL DUTY CYCLES.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation* (TC

≤≤100ºC)

220

W

IC

Device Current *

7.0

A

VCC

Collector Supply Voltage*

50

V

TJ

Junction Temperature

250

°°C

TSTG

Storage Temperature

-65 to +200

°°C

Thermal Data

RTH(J-C)

Junction - Case Thermal Resistance

0.80

°°C/W

*Applies only to rated RF amplifier operation

Features

•• REFRACTORY/GOLD METALIZATION

•• LOW THERMAL RESISTANCE

•• INPUT/OUTPUT MATCHING

•• OVERLAY GEOMETRY

•• EMITTER SITE BALLASTED

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATION

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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