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MS2211 Datenblatt(PDF) 1 Page - Microsemi Corporation |
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MS2211 Datenblatt(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page ![]() MSC0919.PDF 9-23-98 MS2211 DESCRIPTION: DESCRIPTION: The MS2211 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit PDISS Power Dissipation * (TC ≤≤ 75°°C) 25 W IC Device Current * 0.9 A VCC Collector - Supply Voltage * 32 V TJ Junction Temperature (Pulsed RF Operation) 250 °°C TSTG Storage Temperature - 65 to + 200 °°C Thermal Data Thermal Data RTH(j-c) Junction-Case Thermal Resistance * 7.0 °°C/W * Applies only to rated RF amplifier operation Features •• REFRACTORY/GOLD METALLIZATION •• EMITTER SITE BALLASTED •• 5:1 VSWR CAPABILITY •• LOW THERMAL RESISTANCE •• INPUT/OUTPUT MATCHING •• OVERLAY GEOMETRY •• METAL/CERAMIC HERMETIC PACKAGE •• P OUT = 6.0 W MIN. WITH 9.3 dB Gain RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
Ähnliche Teilenummer - MS2211 |
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Ähnliche Beschreibung - MS2211 |
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