ATP218 datasheet(2/7 Pages) ONSEMI

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ATP218

No.8970-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

0.5

1.3

Forward Transfer Admittance

| yfs |

VDS=10V, ID=50A

260

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=50A, VGS=4.5V

2.9

3.8

mΩ

RDS(on)2

ID=25A, VGS=2.5V

4.0

5.6

mΩ

Input Capacitance

Ciss

VDS=10V, f=1MHz

6600

Output Capacitance

Coss

780

Reverse Transfer Capacitance

Crss

600

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

960

Turn-OFF Delay Time

td(off)

340

Fall Time

320

Total Gate Charge

VDS=15V, VGS=4.5V, ID=100A

Gate-to-Source Charge

Qgs

Gate-to-Drain “Miller” Charge

Qgd

Diode Forward Voltage

VSD

IS=100A, VGS=0V

0.91

1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP218-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID=50A

RL=0.3Ω

VDD=15V

VOUT

ATP218

VIN

4.5V

VIN

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