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ATP218 Datenblatt(PDF) 4 Page - ON Semiconductor |
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ATP218 Datenblatt(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() ATP218 No.8970-4/7 A S O Drain-to-Source Voltage, VDS -- V VGS -- Qg Total Gate Charge, Qg -- nC IT16427 0.1 1.0 2 3 5 7 2 3 5 7 2 3 5 5 3 2 7 7 10 0.1 IDP=300A (PW≤10μs) ID=100A 100 μs 1ms 10ms 100ms Operation in this area is limited by RDS(on). 1.0 23 5 7 2 10 100 35 7 2 3 7 5 10 μs 100 1000 IT16426 0 0 1 2 3 4 70 10 20 30 40 60 50 5 VDS=15V ID=100A Tc=25 °C Single pulse EAS -- Ta Ambient Temperature, Ta -- °C PD -- Tc Case Temperature, Tc -- °C 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 IT16429 IT16428 0 0 20 40 60 80 100 140 120 60 50 40 20 30 10 70 160 |
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