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STP100N8F6 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP100N8F6
Bauteilbeschribung  High avalanche ruggedness
PDF  15 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP100N8F6 Datenblatt(HTML) 3 Page - STMicroelectronics

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STP100N8F6
Electrical ratings
DocID026838 Rev 3
3/15
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
100
A
ID
Drain current (continuous) at TC = 100 °C
70
A
IDM(1)
Drain current (pulsed)
400
A
PTOT
Total dissipation at TC = 25 °C
176
W
EAS(2)
Single pulse avalanche energy
170
mJ
TJ
Operating junction temperature range
-55 to 175
°C
Tstg
Storage temperature range
°C
Notes:
(1)Pulse width is limited by safe operating area.
(2)Starting Tj = 25 °C, Id = 25 A, Vdd = 40 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
0.85
°C/W
Rthj-amb
Thermal resistance junction-ambient max.
62.5
°C/W



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