STP100N8F6 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STP100N8F6

4/15

DocID026838 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 250 µA

IDSS

Zero-gate voltage

drain current

VGS = 0, VDS = 80 V

µA

VGS = 0, VDS = 80 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

100

VGS(th)

Gate threshold

voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 50 A

0.008

0.009

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 25 V,

f = 1 MHz

5955

Coss

Output capacitance

244

Crss

Reverse transfer

capacitance

160

Total gate charge

VDD = 40 V, ID = 100 A,

VGS = 10 V (see Figure

14: "Test circuit for gate

charge behavior" )

100

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 50 A,

RG = 4.7

Ω, VGS = 10 V

(see Figure 13: "Test

circuit for resistive load

switching times" and

Figure 18: "Switching time

waveform" )

Rise time

td(off)

Turn-off delay time

103

Fall time

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