STWBCTR datasheet(31/36 Pages) STMICROELECTRONICS

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STWBC

Electrical characteristics

5.4

EMC characteristics

5.4.1

Electrostatic discharge (ESD)

Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts * (n + 1) supply pin).

Data based on characterization results, not tested in production.

5.4.2

Static latch-up

Two complementary static tests are required on 10 parts to assess the latch-up

performance.

A supply overvoltage (applied to each power supply pin) and a current injection (applied to

THE each input, output and configurable I/O pin) are performed on each sample. This test

conforms to the EIA/JESD 78 IC latch-up standard.

Table 18. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Maximum

value

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = 25 °C, conforming to

JEDEC/JESD22-A114E

2000

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

TA = 25 °C, conforming to

ANSI/ESD STM 5.3.1 ESDA

500

VESD(MM)

Electrostatic discharge voltage

(machine model)

TA = 25 °C, conforming to

JEDEC/JESD-A115-A

200

Table 19. Electrical sensitivity

Symbol

Parameter

Conditions

Level

Static latch-up class

TA = 105 °C

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