ACE3401D

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

This device is particularly suited for low voltage application such as portable equipment, power

management and other battery powered circuits, and low in-line power dissipation are needed in a very

small outline surface mount package Excellent thermal and electrical capabilities.

Features

DS

DS(ON)

<63m

Ω @ V

DS(ON)

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

Drain Current

-3

A

-2.4

Drain Current (Pulse)

-30

A

Continuous Power Dissipation

500

mW

Packaging Type

SOT-23-3L

D

3

1

2

G

S

Ordering information

ACE3401D XX + H

SOT-23-3

Description

1

Gate

2

Source

3

Drain

BM : SOT-23-3

Pb - free

Halogen - free