2

CGH40120F Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

V

DSS

84

Volts

25˚C

Gate-to-Source Voltage

V

GS

-10, +2

Volts

25˚C

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

30

mA

25˚C

I

DMAX

12

A

25˚C

T

S

245

˚C

Screw Torque

τ

80

in-oz

R

θ

JC

1.39

˚C/W

85˚C

T

C

-40, +150

˚C

Note:

1

Current limit for long term, reliable operation

2

Refer to the Application Note on soldering at www.cree.com/RF/Document-Library

3

Measured for the CGH40120F at P

4

See also, the Power Dissipation De-rating Curve on Page 7.

Electrical Characteristics (T

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

Gate Threshold Voltage

V

GS(th)

-3.8

-3.0

-2.3

V

DC

V

Gate Quiescent Voltage

V

GS(Q)

–

-2.7

–

V

DC

V

I

DS

23.2

28.0

–

A

V

Drain-Source Breakdown Voltage

V

BR

120

–

–

V

DC

V

Small Signal Gain

G

SS

17.5

19

–

dB

V

P

SAT

100

120

–

W

V

η

55

70

–

%

V

Output Mismatch Stress

VSWR

–

–

10 : 1

Y

No damage at all phase angles,

V

P

Dynamic Characteristics

Input Capacitance

C

GS

–

35.3

–

pF

V

Output Capacitance

C

DS

–

9.1

–

pF

V

Feedback Capacitance

C

GD

–

1.6

–

pF

V

Notes:

1

Measured on wafer prior to packaging.

2

Scaled from PCM data.

3

Measured in CGH40120F-AMP

4

P

5

Drain Efficiency = P