| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1975 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1975 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2SC1975 DESCRIPTION ·Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) ·Withstands worst overload conditions. APPLICATIONS ·Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V ICM Collector Current 3 A PC Total Power Dissipation @ TC=25℃ 12 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SC1975 |
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Ähnliche Beschreibung - 2SC1975 |
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