IS62LV256 datasheet(4/9 Pages) ISSI

4 / 9 page

IS62LV256

ISSI®

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. K

12/11/02

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

COUT

Output Capacitance

VOUT = 0V

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc =3.3V.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-45 ns

-70 ns

Symbol

Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

ICC1

Vcc Operating

VCC = Max.,

CE = VIL

Com.

—

Supply Current

IOUT = 0 mA, f = 0

Ind.

—

ICC2

Vcc Dynamic Operating

VCC = Max.,

CE = VIL

Com.

—

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

ISB1

TTL Standby Current

VCC = Max.,

Com.

—

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

≥ VIH, f = 0

ISB2

CMOS Standby

VCC = Max.,

Com.

—

µA

Current (CMOS Inputs)

≥ VCC – 0.2V,

Ind.

—

200

—

200

VIN

≥ VCC – 0.2V, or

VIN

≤ 0.2V, f = 0

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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