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KSD560 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer KSD560
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSD560 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Darlington Power Transistor
KSD560
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·
High DC Current Gain
: hFE= 2000(Min) @IC= 3.0A
·
Low Saturation Voltage
·
Complement to Type KSB601
APPLICATIONS
·
Designed for low frequency power amplifiers and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
8
A
IB
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@ Ta=25℃
1.5
W
Collector Power Dissipation
@ TC=25℃
30
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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