DAC70004 datasheet(4/38 Pages) TI1

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DAC80004, DAC70004, DAC60004

SLASED6B – APRIL 2016 – REVISED JUNE 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage, VDD to GND

–0.3

Voltage, digital input or output to GND

–0.3

VDD + 0.3

Voltage, analog input (REFIN) or output (VOUTx) to GND

–0.3

VDD + 0.3

Input current to any pin except supply pins

–10

Maximum junction temperature

150

°C

Storage temperature range, Tstg

-60

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

Charged device model (CDM), per JEDEC specification JESD22-C101,

all pins(2)

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Voltage, VDD to GND

2.7

5.5

Voltage, analog input (REFIN) or output

(VOUTx) to GND

2.7 V

≤ VDD ≤ 4.5 V

2.2

VDD – 0.2

4.5 V

≤ VDD ≤ 5.5 V

2.2

VDD

Ambient Operating Temperature, TA

-40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

DACx0004

UNIT

DMD (VSON)

PW (TSSOP)

14 PINS

RθJA

Junction-to-ambient thermal resistance

39.6

99.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

27.3

23.4

°C/W

RθJB

Junction-to-board thermal resistance

9.0

42.8

°C/W

ψJT

Junction-to-top characterization parameter

0.3

0.9

°C/W

ψJB

Junction-to-board characterization parameter

8.9

42.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

6.5

N/A

°C/W

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