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LM5100 Datenblatt(PDF) 3 Page - Texas Instruments |
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LM5100 Datenblatt(HTML) 3 Page - Texas Instruments |
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3 / 18 page ![]() NRND LM5100, LM5101 www.ti.com SNVS267C – MAY 2004 – REVISED MARCH 2005 PIN DESCRIPTION(1) Pin # Name Description Application Information WSON- SO-8 10 1 1 VDD Positive gate drive supply Locally decouple to VSS using low ESR/ESL capacitor located as close to IC as possible. 2 2 HB High side gate driver bootstrap Connect the positive terminal of the bootstrap capacitor to HB and rail the negative terminal to HS. The Bootstrap capacitor should be place as close to IC as possible. 3 3 HO High side gate driver output Connect to gate of high side MOSFET with a short low inductance path. 4 4 HS High side MOSFET source Connect to bootstrap capacitor negative terminal and the source of connection the high side MOSFET. 5 7 HI High side driver control input The LM5100 inputs have CMOS type thresholds. The LM5101 inputs have TTL type thresholds. Unused inputs should be tied to ground and not left open. 6 8 LI Low side driver control input The LM5100 inputs have CMOS type thresholds. The LM5101 inputs have TTL type thresholds. Unused inputs should be tied to ground and not left open. 7 9 VSS Ground return All signals are referenced to this ground. 8 10 LO Low side gate driver output Connect to the gate of the low side MOSFET with a short low inductance path. (1) Note: For WSON-10 package, it is recommended that the exposed pad on the bottom of the LM5100 / LM5101 be soldered to ground plane on the PC board, and the ground plane should extend out from beneath the IC to help dissipate the heat. Pins 5 and 6 have no connection. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 2004–2005, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM5100 LM5101 |
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