LM5100 datasheet(8/18 Pages) TI1

8 / 18 page

-50

-25

100 125 150

TEMPERATURE (°C)

0.100

0.200

0.300

0.400

0.500

0.600

0.700

VDD = VHB = 8V

VDD = VHB = 12V

VDD = VHB = 16V

-50

-25

100 125 150

TEMPERATURE (°C)

0.100

0.150

0.200

0.250

0.300

0.350

0.400

VDD = VHB = 8V

VDD = VHB = 12V

VDD = VHB = 16V

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-01

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VD (V)

T = 25°C

T = -40°C

T = 150°C

HO, LO (V)

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

SINKING

SOURCING

VDD = VHB = 12V, HS = 0V

-25 0

25 50

_ 75_100_125_150_

TEMPERATURE (

oC)

0.30

0.35

0.40

0.45

0.50

0.55

0.60

-50

VHBH

VDDH

-50

-25

100 125 150

TEMPERATURE (°C)

6.30

6.40

6.50

6.60

6.70

6.80

6.90

7.00

7.10

7.20

7.30

VHBR

VDDR

NRND

LM5100, LM5101

SNVS267C – MAY 2004 – REVISED MARCH 2005

www.ti.com

Typical Performance Characteristics (continued)

Undervoltage Rising Thresholds

LM5100 Undervoltage Threshold Hysteresis

Temperature

Figure 7.

Figure 8.

HO and LO Peak Output Current

Bootstrap Diode Forward Voltage

Output Voltage

Figure 9.

Figure 10.

LO and HO Gate Drive—High Level Output Voltage

LO and HO Gate Drive—Low Level Output Voltage

Temperature

Figure 11.

Figure 12.

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