| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SB1100 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1100 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Darlington Power Transistor 2SB1100 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -25mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -25mA -2.0 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -10A ; VCE= -2V 1000 30000 Switching Times ton Turn-on Time VCC≈ -50V, RL= 5Ω, IC= -10A; IB1= -IB2= -25mA, 1.0 μ s tstg Storage Time 5.0 μ s tf Fall Time 2.0 μ s hFE Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 |
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