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2SB1100 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SB1100
Bauteilbeschribung  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1100 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
2SB1100
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·
High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A
·
Complement to Type 2SD1591
APPLICATIONS
·
Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Pulse
-20
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@Ta=25℃
2
W
Collector Power Dissipation
@TC=25℃
30
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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