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2N6580 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2N6580
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6580 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2N6580
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 5A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
IEBO
Emitter Cutoff Current
VEB= 9.0V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 5A ; VCE= 3V
7
35
fT
Current Gain-Bandwidth Product
IC= 1A ; VCE= 10V; ftest=10MHz
12.5
50
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
75
250
pF
Switching times-Resistive Load
td
Delay Time
IC= 5A, IB1= -IB2= 1A, VCC= 150V; R= 30Ω
tp=100μs; Duty Cycle≤2.0%
0.05
μ
s
tr
Rise Time
0.5
μ
s
ts
Storage Time
2.0
μ
s
tf
Fall Time
0.5
μ
s



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