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2N6580 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2N6580
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6580 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N6580
DESCRIPTION
·
Excellent Safe Operating Area
·
High Voltage,High Speed
·
Low Saturation Voltage
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
APPLICATIONS
·
Off-line power supplies
·
Switching amplifiers
·
Inverters/Converters
·
Motor speed control circuits
·
Switching regulator
·
Solenoid& relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.4
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9.0
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
16
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃
125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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