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2N6609 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6609 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2N6609 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 -140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -1.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A -4.0 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -4V -2.2 V ICEO Collector Cutoff Current VCE= -120V; IB= 0 -10 mA IEBO Emitter Cutoff Current VEB= -7.0V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -8A ; VCE= -4V 15 60 hFE-2 DC Current Gain IC= -16A ; VCE= -4V 5 |
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