2N6609 datasheet(1/2 Pages) ISC

Teilenummer	2N6609

Bauteilbeschribung	isc Silicon PNP Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2N6609

DESCRIPTION

·

Excellent Safe Operating Area

·

High DC Current Gain-hFE=15(Min)@IC = -8A

·

Low Saturation Voltage-

: VCE(sat)= -1.4V(Max)@ IC = -8A

·

Complement to Type 2N3773

APPLICATIONS

·

Designed for high power audio ,disk head positioners and

other linear applications, which can also be used in power

switching circuits such as relay or solenoid drivers, DC-DC

converters or inverters.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.17

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEX

Collector-Emitter Voltage

-160

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-16

A

ICP

Collector Current-Peak

-30

A

IB

Base Current-Continuous

-4

A

IBP

Base Current-Peak

-15

A

PC

Collector Power Dissipation @TC=25℃

150

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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