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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2N6449 Datenblatt(PDF) 1 Page - InterFET Corporation |
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2N6449 Datenblatt(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor ¥ High Voltage Absolute maximum ratings at TA = 25¡C 2N6449 2N6450 Reverse Gate Source Voltage – 300 V – 200 V Reverse Gate Drain Voltage – 300 V – 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derating 6.4 mW/°C 6.4 mW/°C TOÐ39 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case At 25°C free air temperature: 2N6449 2N6450 Process NJ42 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 300 – 200 V IG = – 10 µA, VDS = ØV – 100 nA VGS = – 150V, VDS = ØV Gate Reverse Current IGSS – 100 nA VGS = – 100V, VDS = ØV – 100 µA VGS = – 150V, VDS = ØV TA = 150°C – 100 µA VGS = – 100V, VDS = ØV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 2 – 15 – 2 – 15 V VDS = 30V, ID = 4 nA Drain Saturation Current (Pulsed) IDSS 210210 mA VDS = 30V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward Yfs 0.5 3 0.5 3 mS VDS = 30V, VGS = ØV f = 1 kHz Transfer Admittance Common Source Output Conductance Yos 100 100 µS VDS = 30V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 20 20 pF VDS = 30V, VGS = ØV f = 1 MHz Common Source Crss 2.5 2.5 pF VDS = 30V, VGS = ØV f = 1 MHz Reverse Transfer Capacitance 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-24 |
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Ähnliche Beschreibung - 2N6449 |
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