CHA6550-QXG

Ref. : DSCHA6550-QXG6159 - 07 Jun 16

1/18

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com

17.0- 23.6GHz Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

36 lead 6x5 mm QFN package

The

CHA6550-QXG

is

a

three

stage

monolithic GaAs high power circuit producing

2.5 Watt output power. It is highly linear, with

possible gain control and integrates a power

detector. ESD protections are included.

It is designed for Point To Point Radio and

K band.

The circuit is manufactured with a pHEMT

process, 0.15µm gate length.

It is supplied in RoHS compliant SMD

package.

Main Features

Output power & PAE vs frequency

■ Broadband performances: 17.0- 23.6GHz

■ 34dBm saturated power

■ 41dBm OIP3

■ 22dB gain

■ DC bias: Vd = 6.0Volt @ Id = 1.3A

■ QFN 6x5

■ MSL3

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Frequency range

17.0

23.6

GHz

Gain

Linear Gain

22

dB

Psat

Saturated output power

34

dBm

OIP3

Output IP3

41

dBm

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A6550

YYWW

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

UMS

A3667A

YYWWG

UMS

A3667A

YYWWG

UMS

A3688A

YYWWG

16

18

20

22

24

26

28

30

32

34

36

16

17

18

19

20

21

22

23

24

25

Frequency (GHz)

Psat

P1dB

PAE at Psat.