USB2517I datasheet(49/58 Pages) MICROCHIP

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 2013-2016 Microchip Technology Inc.

DS00001598B-page 49

USB2517/USB2517I

TABLE 8-1:

DC ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Units

Comments

I, IS Type Input Buffer

Low Input Level

High Input Level

Input Leakage

Hysteresis (‘IS’ Only)

VILI

VIHI

IIL

VHYSI

2.0

-10

250

0.8

+10

350

TTL Levels

VIN = 0 to VDD33

Input Buffer with Pull-Up

(IPU)

Low Input Level

High Input Level

Low Input Leakage

High Input Leakage

VILI

VIHI

IILL

IIHL

2.0

+35

-10

0.8

+90

+10

TTL Levels

VIN = 0

VIN = VDD33

Input Buffer with Pull-Down

(IPD)

Low Input Level

High Input Level

Low Input Leakage

High Input Leakage

VILI

VIHI

IILL

IIHL

2.0

+10

-35

0.8

-10

-90

TTL Levels

VIN = 0

VIN = VDD33

ICLK Input Buffer

Low Input Level

High Input Level

Input Leakage

VILCK

VIHCK

IIL

1.4

-10

0.5

+10

VIN = 0 to VDD33

O12, I/O12 & I/OSD12

Type Buffer

Low Output Level

High Output Level

Output Leakage

Hysteresis (‘I/OSD12’ pad

only)

VOL

VOH

IOL

VHYSC

2.4

-10

250

0.4

+10

350

IOL = 12mA @ VDD33 = 3.3V

IOH = -12mA @ VDD33 = 3.3V

VIN = 0 to VDD33

(Note 8-4)

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