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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD463 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD463 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD463 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) · High DC Current Gain : hFE= 3000(Min) @IC= 5A · Low Saturation Voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 12 A IB Base Current-Continuous 0.3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Ähnliche Teilenummer - 2SD463 |
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Ähnliche Beschreibung - 2SD463 |
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