MJD47T4G datasheet(2/6 Pages) ONSEMI

2 / 6 page

MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance Junction−to−Case

RqJC

8.33

°C/W

Thermal Resistance Junction−to−Ambient (Note 2)

RqJA

°C/W

Lead Temperature for Soldering Purpose

260

°C

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 30 mAdc, IB = 0)

MJD47, NJVMJD47T4G

MJD50, NJVMJD50T4G

VCEO(sus)

250

400

−

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

MJD47, NJVMJD47T4G

(VCE = 300 Vdc, IB = 0)

MJD50, NJVMJD50T4G

ICEO

−

0.2

mAdc

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

MJD47, NJVMJD47T4G

(VCE = 500 Vdc, VBE = 0)

MJD50, NJVMJD50T4G

ICES

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1 Adc, VCE = 10 Vdc)

hFE

150

−

Collector−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

VCE(sat)

−

Vdc

Base−Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)

−

MHz

Small−Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

−

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

MJD47T4G Datenblatt(PDF) 2 Page - ON Semiconductor

MJD47T4G Datenblatt(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6

Datenblatt Download

Link URL